Fabrication of transition metal dichalcogenides(TMD) including WSe2(tungsten diselenide), PdSe2(Palladium diselenide) which are also a semiconductor itself is a challenge in field effect transistors(FET). Current metal-semiconductor junction in FET faces a non-ohmic contact due to its Schottky barrier (SB). SB is an energy barrier that prevents you from having ohmic contact when metal and semiconductor come into intimate contact. Silicon based electronics used ion-implantation for doping to have ohmic contact. However, a thin layer of TMD materials can render implantation unnecessary. In order to reduce conduct resistance in TMDs , we insert TMDs at the metal/semiconductor interface.
A Modified Method of Nanofabrication Using 2D Semiconductor Materials in Field-Effect Transistor(FET)
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