In this paper, we report an investigation of structural, electrical and magnetic properties of the as-synthesized and annealed Al-Mn films. The Al1-xMnx thin films, where the Mn content varied in the range 10 to 41 at.%, were prepared on cleaned microscope slide substrates using a direct current (DC) magnetron co-sputtering in a low-pressure argon atmosphere. Structural characterizations were analyzed using grazing incidence X-ray reflectivity (XRD) on the as-deposited and heat treated at 773 °K samples. The electrical transport properties have been studied by Hall Effect measurements. The magnetic characteristics at room temperature were evaluated by a vibration sample magnetometer (VSM).
The X-ray diffraction patterns of the as-deposited Al-Mn films showed that increase in Mn for above ≈ 26 at. % transformed gradually the fcc Al(Mn) solid solution into amorphous structure. After heat treatment XRD pattern revealed that all films have shown a crystal quality. The electrical and magnetic properties of Al-Mn films during annealing are significantly influenced by the transformations from amorphous to crystalline phases.