Track: Modeling and Simulation
Abstract
Linearity plays an important role in the design and implementation of radio frequency power amplifier. Although negative resistance circuits are non-linear circuits, they are associated with distortion, which may either be amplitude-to-amplitude distortion or amplitude-to-phase distortion. In this paper, a unique way of realizing a negative resistance amplifier is proposed using a single Metal-Semiconductor Field-Effect Transistor (MESFET). Intermodulation Distortion Test (IMD) is performed to evaluate the characteristic response of the negative resistance circuit amplifier to different bias voltages using the Harmonic Balance (HB) of the Advanced Designed Software (ADS 2016). The results obtained showed that the proposed negative resistance amplifier exhibits a stable edge gain than a conventional distributed amplifier.