Track: Modeling and Simulation

Abstract

Modern integrated circuits (ICs) focused on lowering the size of semiconductor devices are quicker and more efficient thanks to the implementation of Moore's law at the nanoscale level. The successful scaling of silicon field-effect transistors in terms of power, performance, and cost has primarily driven the exponential growth of microelectronics over the last six decades. Nevertheless, this process is nearing its physical limitations as the critical dimensions of cutting-edge silicon devices approach the 5 nm zone. One of the main stumbling blocks to enhancing the device's performance is that MOSFETs have reliability concerns at the nanoscale. Reliability issues with silicon based MOSFET technology are a significant cause for worry in the nanoscale area. Thus, the integrated circuit manufacturing sector assumes that silicon devices would be unable to meet the needs of nanoscale technology to future perspective and demand. The miniaturization of MOS nanoscale semiconductor devices allows for more functionality and integration density per unit area without sacrificing performance. Due to their distinct geometrical and electrical features, carbon nanotubes (CNT) have been proposed as a viable alternative to silicon in the primary function of next-generation logic switches. This article first reviews the latest progress toward addressing the manufacturability issues for scaled carbon-nanotube transistors, from the material level up to the level of device integration and reliability concern. Then it compares these advantages to silicon from a technological development perspective. Lastly, potential future uses of nanotube transistors in the industry be proposed.