5th Annual International Conference on Industrial Engineering and Operations Management

Effect of humidity and temperature on organic semiconductor CuPc films deposited at different gravity conditions

Noshin Fatima
Publisher: IEOM Society International
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Track: Sensors and Sensing Systems
Abstract

Structure and properties of organic semiconductors highly depends upon their processing technology. Generally, organic materials have more molecular weight, strong intramolecular but weak Van der Waal’s intermolecular bonding. Due to these properties,organic semiconductors are found suitable for centrifugal processing that has given interesting results. In this study effect of humidity and temperature on the electrical properties of thin films of organic semiconductor CuPc deposited from four different solutions (acetone, benzene, methanol and toluene)at different gravity conditions (1g and 70g)  by centrifugation are reported. Surface-type samples were fabricated using copper thin films as electrodes deposited on glass substrates. Impedance and capacitance variations at room temperature were measured as a response of relative humidity ranged from 32%~98% at 1 kHz frequency. Similar parameters were measured at 1kHz and fixed humidity for variable temperature effect of 25~70°C. In addition, depending on the solutionused duringthe deposition process,decreases in impedance and increase incapacitance with an increase ineither humidity or temperature is also observed. Change inthe properties of the CuPc films, deposited at different gravity conditionsfrom different solutions, can be considered due to the changes in the structure and composition of the films. The results of the investigations potentially can be used for the fabrication of organic electronic devices that can be used in instrumentation and optoelectronics.

Published in: 5th Annual International Conference on Industrial Engineering and Operations Management, Dubai, United Arab Emirates

Publisher: IEOM Society International
Date of Conference: March 3-5, 2015

ISBN: 978-0-9855497-2-5
ISSN/E-ISSN: 2169-8767